STP140NF55 STMicroelectronics, STP140NF55 Datasheet - Page 3

• Manufacturer Part Number: STP140NF55
• Description: MOSFET N-CH 55V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP140NF55

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 142nC @ 10V
• Input Capacitance (ciss) @ Vds: 5300pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 100 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 80A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4370-5

STB140NF55 - STB140NF55-1 - STP140NF55
1
Electrical ratings
Table 1.
1. Current limited by package
2. Pulse width limited by safe operating area
3. I
4. Starting Tj = 25°C, I
Table 2.
1. When mounted on 1 inch², FR4 board, 2 oz Cu
Rthj-pcb
Rthj-case
Rthj-amb
Symbol
dv/dt
Symbol
E
I
SD
DM
P
I
I
V
V
T
AS
D
D
TOT
T
GS
T
DS
stg
(1)
(1)
< 80A, di/dt < 300A/µs, V
j
(2)
l
(4)
(3)
(1)
Absolute maximum ratings
Thermal data
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalance energy
Storage temperature
Operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose (for 10 sec, 1.6mm from case)
D
= 40A, V
DD
DD
=80%V
Parameter
Parameter
= 30V
C
= 25°C
GS
(BR)DSS
= 0)
C
C
= 25°C
= 100°C
TO-220 - I²PAK
62.5
--
–55 to 175
Value
Value
±20
320
300
300
1.3
0.5
55
80
80
10
2
Electrical ratings
D²PAK
35
--
°C/W
°C/W
°C/W
W/°C
V/ns
Unit
Unit
°C
°C
W
3/15
V
V
A
A
A
J