STP140NF55 STMicroelectronics, STP140NF55 Datasheet - Page 5

MOSFET N-CH 55V 80A TO-220

STP140NF55

Manufacturer Part Number
STP140NF55
Description
MOSFET N-CH 55V 80A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP140NF55

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
142nC @ 10V
Input Capacitance (ciss) @ Vds
5300pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
100 S
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
80A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
8mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4370-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP140NF55
Manufacturer:
ST
Quantity:
30 000
Part Number:
STP140NF55
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP140NF55
Manufacturer:
ST
0
Part Number:
STP140NF55,140NF55
Manufacturer:
ST
0
Part Number:
STP140NF55,P140NF55
Manufacturer:
ST
0
Part Number:
STP140NF55������
Manufacturer:
ST
0
STB140NF55 - STB140NF55-1 - STP140NF55
Table 5.
Table 6.
1. Pulse width limited safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
SD
d(on)
d(off)
RRM
I
Q
SD
t
t
t
rr
r
f
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 13)
V
R
(see Figure 13)
I
I
V
(see Figure 15)
SD
SD
DD
DD
DD
G
G
= 4.7Ω , V
= 4.7Ω, V
= 80A, V
= 80A, di/dt = 100 A/µs,
= 27.5 V, I
= 27.5V, I
= 20V, T
Test conditions
Test conditions
GS
j
GS
GS
= 150°C
D
D
= 0
= 40A,
= 10V
= 40A
= 10V
Electrical characteristics
Min.
Min.
Typ.
Typ.
275
150
125
6.5
30
45
90
Max. Unit
Max. Unit
320
1.5
80
nC
ns
ns
ns
ns
ns
5/15
A
A
V
A

Related parts for STP140NF55