STP140NF55 STMicroelectronics, STP140NF55 Datasheet - Page 6

• Manufacturer Part Number: STP140NF55
• Description: MOSFET N-CH 55V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP140NF55

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 142nC @ 10V
• Input Capacitance (ciss) @ Vds: 5300pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 100 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 80A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4370-5

Electrical characteristics
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Figure 1.
Figure 3.
Figure 5.
Safe operating area
Output characteristics
Transconductance
Electrical characteristics (curves)
Figure 2.
Figure 4.
Figure 6.
STB140NF55 - STB140NF55-1 - STP140NF55
Thermal impedance
Transfer characteristics
Static drain-source on resistance