IXFH12N80P IXYS, IXFH12N80P Datasheet - Page 3

• Manufacturer Part Number: IXFH12N80P
• Description: MOSFET N-CH 800V 12A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFH12N80P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5.5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 2800pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 0.85
• Ciss, Typ, (pf): 2800
• Qg, Typ, (nc): 51
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 360
• Rthjc, Max, (ºc/w): 0.35
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
12
10
12
10
8
6
4
2
0
8
6
4
2
0
0
0
0
2
V
GS
Fig. 3. Output Char acte r is tics
Fig. 5. R
Fig. 1. Output Characte r is tics
2
4
4
= 10V
6
0.5 I
4
8
8
DS(on)
V
D25
I
D S
V
D
V
@ 125
10
D S
GS
- A mperes
@ 25
V
V alue vs . I
- V olts
GS
Nor m alize d to
12
12
- V olts
= 10V
6
= 10V
º
º
7V
7V
T
14 16
C
C
J
= 125
5V
6V
16
5V
6V
8
D
º
T
18
C
J
= 25
10
20
20
º
C
22
12
24
24
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
24
20
16
12
14
12
10
8
4
0
2
1
8
6
4
2
0
-50
-50
Fig. 2. Exte nde d Output Char acte r is tics
0
Fig. 4. R
V alue vs . Junction Te m pe r atur e
V
IXFH12N80P IXFQ12N80P
IXFV12N80P IXFV12N80PS
3
-25
-25
GS
Fig. 6. Dr ain Cur r e nt vs . Cas e
= 10V
6
T
0
0
DS(on
T
C
J
9
- Degrees Centigrade
- Degrees Centigrade
I
D
Te m pe r atur e
25
25
)
= 12A
12
Norm alize d to 0.5 I
V
@ 25
D S
V
GS
15
50
50
- V olts
º
C
= 10V
18
7V
75
75
I
D
= 6A
21
100
100
6V
5V
24
D25
125
125
27
30
150
150