IXFH12N80P IXYS, IXFH12N80P Datasheet - Page 5

• Manufacturer Part Number: IXFH12N80P
• Description: MOSFET N-CH 800V 12A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFH12N80P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5.5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 2800pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 0.85
• Ciss, Typ, (pf): 2800
• Qg, Typ, (nc): 51
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 360
• Rthjc, Max, (ºc/w): 0.35
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
PLUS220 (IXFV) Outline
1.000
0.100
0.010
0.001
0.00001
0.0001
Fig. 12. Maximum Transient Thermal Resistance
0.001
PLUS220SMD (IXFV_S) Outline
Pulse Width - Seconds
0.01
0.1
IXFH12N80P IXFQ12N80P
IXFV12N80P IXFV12N80PS
1
10