IXFH12N80P IXYS, IXFH12N80P Datasheet - Page 4

• Manufacturer Part Number: IXFH12N80P
• Description: MOSFET N-CH 800V 12A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFH12N80P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5.5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 2800pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 0.85
• Ciss, Typ, (pf): 2800
• Qg, Typ, (nc): 51
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 360
• Rthjc, Max, (ºc/w): 0.35
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
10
16
14
12
10
35
30
25
20
15
10
8
6
4
2
0
5
0
0.4
0
4
f = 1MH z
5
0.5
4.5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Sour ce Cur r e nt vs .
Sour ce -To-Dr ain V oltage
T
10
J
0.6
= 125
-40
25
V
15
V
V
º
º
º
G S
5
T
S D
C
C
0.7
D S
C
J
= 125
- V olts
- V olts
20
- V olts
º
0.8
C
5.5
25
0.9
30
C rss
C iss
C oss
T
J
6
= 25
1
35
º
C
6.5
1.1
40
24
21
18
15
12
10
9
6
3
0
9
8
7
6
5
4
3
2
1
0
0
0
T
J
V
I
I
D
G
= -40
5
DS
IXFH12N80P IXFQ12N80P
IXFV12N80P IXFV12N80PS
125
2
= 6A
= 10m A
25
Fig. 8. Tr ans conductance
= 400V
10
º
º
º
C
C
C
Fig. 10. Gate Char ge
4
15
Q
6
G
20
I
D
- nanoCoulombs
- A mperes
8
25
30
10
35
12
40
14
45
16
50
18
55