IRF3805STRL-7PP International Rectifier, IRF3805STRL-7PP Datasheet - Page 4

• Manufacturer Part Number: IRF3805STRL-7PP
• Description: MOSFET N-CH 55V 160A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3805STRL-7PP

• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 300W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 160A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 140A, 10V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 240A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single Quint Source
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 240 A
• Power Dissipation: 300 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 130 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.1
10
1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 175°C
Forward Voltage
C iss
C rss
C oss
f = 1 MHZ
10
T J = 25°C
V GS = 0V
100
10000
1000
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
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10
Fig 8. Maximum Safe Operating Area
1
0
1
Fig 6. Typical Gate Charge vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 140A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
50
V DS = 64V
V DS = 40V
DC
10
1msec
10msec
100µsec
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100