IRF3805STRL-7PP International Rectifier, IRF3805STRL-7PP Datasheet - Page 7
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IRF3805STRL-7PP
Manufacturer Part Number
IRF3805STRL-7PP
Description
MOSFET N-CH 55V 160A D2PAK-7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF3805S-7PPBF.pdf
(11 pages)
Specifications of IRF3805STRL-7PP
Package / Case
D²Pak, TO-263 (6 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
200nC @ 10V
Vgs(th) (max) @ Id
4V @ 250µA
Current - Continuous Drain (id) @ 25° C
160A
Drain To Source Voltage (vdss)
55V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.6 mOhm @ 140A, 10V
Transistor Polarity
N Channel
Continuous Drain Current Id
240A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
2mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single Quint Source
Resistance Drain-source Rds (on)
2.6 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
240 A
Power Dissipation
300 W
Mounting Style
SMD/SMT
Gate Charge Qg
130 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
1000
100
10
500
400
300
200
100
1.0E-06
1
0
Fig 16. Maximum Avalanche Energy
25
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 150°C.
Starting T J , Junction Temperature (°C)
50
Duty Cycle = Single Pulse
vs. Temperature
TOP
BOTTOM 1% Duty Cycle
I D = 140A
75
1.0E-05
100
Fig 15. Typical Avalanche Current vs.Pulsewidth
Single Pulse
0.01
125
j = 25°C and
0.05
0.10
150
1.0E-04
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 12a, 12b.
T
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart =25°C (Single Pulse)
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
1.0E-03
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
= P
D (ave)
1.0E-02
jmax
av
Tj = 150°C and
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
thJC
jmax
1.0E-01
7
is