STP10NM65N STMicroelectronics, STP10NM65N Datasheet - Page 3

• Manufacturer Part Number: STP10NM65N
• Description: MOSFET N-CH 650V 9A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP10NM65N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.48 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 9 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 430mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• For Use With: 497-6416 - BOARD EVAL L5991/STP10NK60Z
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7499-5; STP10NM65N

STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Symbol
dv/dt
Symbol
R
Symbol
R
R
I
SD
DM
P
V
V
thj-case
V
T
thj-amb
thj-pcb
E
I
I
TOT
I
T
ISO
GS
T
DS
stg
D
D
AS
AS
j
≤ 9 A, di/dt ≤ 400 A/µs, V
(2)
l
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case
max
Thermal resistance junction-pcb max
Thermal resistance junction-amb
max
Maximum lead temperature for
soldering purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting T
j
= 25 °C, I
Parameter
DD
Parameter
Parameter
= 80% V
C
D
= 25 °C
GS
= I
AS
= 0)
(BR)DSS
, V
C
C
DD
= 25 °C
= 100 °C
= 50 V)
C
= 25 °C)
TO-220
62.5
--
IPAK
1.38
100
TO-220/IPAK
--
DPAK
5.7
36
90
300
--
9
DPAK
Max value
-55 to 150
50
--
Value
± 25
200
150
2.5
650
15
TO-220FP
Electrical ratings
TO-220FP
5.7
2500
36
9
62.5
25
(1)
--
5
(1)
(1)
°C/W
°C/W
°C/W
V/ns
Unit
Unit
Unit
°C
°C
°C
mJ
W
V
V
A
A
A
V
A
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