STP10NM65N STMicroelectronics, STP10NM65N Datasheet - Page 4

• Manufacturer Part Number: STP10NM65N
• Description: MOSFET N-CH 650V 9A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP10NM65N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.48 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 9 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 430mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• For Use With: 497-6416 - BOARD EVAL L5991/STP10NK60Z
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7499-5; STP10NM65N

Electrical characteristics
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Electrical characteristics
(T
Table 5.
1. Characteristics value at turn off on inductive load
Table 6.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
dv/dt
R
CASE
V
oss eq.
(BR)DSS
g
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
fs
Q
oss
oss eq.
rss
iss
gs
gd
g
(1)
(1)
=25 °C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Drain source voltage slope
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
= 0)
V
V
V
V
V
V
(see Figure 19)
I
V
V
V
V
V
V
V
D
GS
GS
GS
DS
DS
DD
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
=15 V
= 10 V
= 520 V, I
= 50 V, f = 1 MHz,
= 0
= 0, V
= 520 V, I
= 10 V,
= max rating
= max rating, @125 °C
= ± 20 V
= V
= 10 V, I
Test conditions
Test conditions
GS
,
DS
, I
I
D
GS
D
D
= 4.5 A
D
= 0 to 520 V
D
= 250 µA
= 9 A,
= 4.5 A
= 0
= 9 A,
Min.
Min.
650
2
Typ.
Typ.
0.43
850
7.5
53
90
25
14
25
4
4
3
oss
Max.
±100
Max.
0.48
when V
100
1
4
DS
Unit
V/ns
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
Ω
V
V
S