STP10NM65N STMicroelectronics, STP10NM65N Datasheet - Page 5

• Manufacturer Part Number: STP10NM65N
• Description: MOSFET N-CH 650V 9A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP10NM65N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.48 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 9 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 430mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• For Use With: 497-6416 - BOARD EVAL L5991/STP10NK60Z
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7499-5; STP10NM65N

STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 18)
I
I
di/dt = 100 A/µs
V
(see Figure 20)
I
di/dt = 100 A/µs
V
(see Figure 20)
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω V
= 9 A, V
= 9 A,
= 9 A,
= 325 V, I
= 100 V
= 100 V, T
Test conditions
Test conditions
GS
GS
D
= 0
j
= 150 °C
= 4.5 A
= 10 V
Electrical characteristics
Min
Min
Typ
330
430
Typ
19
19
12
50
20
3
4
8
Max
Max Unit
1.3
36
9
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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