IRFP260NPBF International Rectifier, IRFP260NPBF Datasheet

MOSFET N-CH 200V 50A TO-247AC

IRFP260NPBF

Manufacturer Part Number
IRFP260NPBF
Description
MOSFET N-CH 200V 50A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRFP260NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
234nC @ 10V
Input Capacitance (ciss) @ Vds
4057pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Current, Drain
50 A
Gate Charge, Total
234 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
300 W
Resistance, Drain To Source On
0.04 Ohm
Resistance, Thermal, Junction To Case
0.5 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
55 ns
Time, Turn-on Delay
17 ns
Transconductance, Forward
27 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.04Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Drain Current (max)
50A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
49 A
Mounting Style
Through Hole
Gate Charge Qg
156 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP260NPBF

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Part Number
Manufacturer
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Price
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www.irf.com
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Absolute Maximum Ratings
Thermal Resistance
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of
applications.
The TO-247 package is preferred for
applications where higher power levels preclude the use of TO-220
devices. The TO-247 is similar but superior to the earlier TO-218
package because of its isolated mounting hole.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter


commercial-industrial
ƒ
GS
GS

@ 10V
@ 10V
G
IRFP260NPbF
Typ.
300 (1.6mm from case )
0.24
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to +175
D
S
Max.
TO-247AC
200
300
560
2.0
±20
50
35
50
30
10
®
R
Power MOSFET
V
DS(on)
Max.
0.50
–––
40
DSS
I
D
= 50A
PD - 95010A
= 200V
= 0.04Ω
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

IRFP260NPBF Summary of contents

Page 1

... T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- srew Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com IRFP260NPbF G commercial-industrial @ 10V GS @ 10V GS  ‚   ƒ 300 (1.6mm from case ) Typ. 0. 95010A ® HEXFET ...

Page 2

... IRFP260NPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP 100 BOTTOM 10 1 ° 0.1 100 0.1 3 3.0 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 -20 0 9.0 10.0 IRFP260NPbF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 50A V = 10V ...

Page 4

... IRFP260NPbF 8000 0V MHZ C iss = SHORTED 7000 C rss = oss = 6000 Ciss 5000 4000 Coss 3000 2000 Crss 1000 Drain-to-Source Voltage (V) 1000 100 T = 175 C ° ° 0.1 0.2 0.6 1.0 1.4 V ,Source-to-Drain Voltage ( 100 1000 1000 OPERATION IN THIS AREA LIMITED 100 175 Single Pulse 1 1 ...

Page 5

... SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 www.irf.com 90% 90% 150 175 150 175 ° 10% 10% ° 0.001 0. Rectangular Pulse Duration (sec) 1 IRFP260NPbF + - ≤ 1 ≤ 1 ≤ 0.1 % ≤ 0 d(on) d(on d(off) d(off Notes: 1. Duty factor Peak ...

Page 6

... IRFP260NPbF D.U 20V 0.01 Ω Charge 6 1500 15V DRIVER 1000 + 500 V (BR)DSS 0 25 Starting T , Junction Temperature ( C) 12V I D TOP 11A 20A BOTTOM 28A 50 75 100 125 150 J Current Regulator Same Type as D.U.T. 50KΩ .2µF .3µF + D.U. 3mA Current Sampling Resistors www ...

Page 7

... P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% IRFP260NPbF + - V =10V ...

Page 8

... IRFP260NPbF 15.90 (.626) 15.30 (.602 20.30 (.800) 19.70 (.775 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079 5.45 (.215) 3.40 (.133) 2X 3.00 (.118) EXAMPLE: T HIS IS AN IRFPE30 WIT EMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 SEMBLY LINE "H" Note: "P" in assembly line position indicates " ...

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