IRFP260NPBF International Rectifier, IRFP260NPBF Datasheet - Page 3

• Manufacturer Part Number: IRFP260NPBF
• Description: MOSFET N-CH 200V 50A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFP260NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 234nC @ 10V
• Input Capacitance (ciss) @ Vds: 4057pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Channel Type: N
• Current, Drain: 50 A
• Gate Charge, Total: 234 nC
• Package Type: TO-247AC
• Polarization: N-Channel
• Power Dissipation: 300 W
• Resistance, Drain To Source On: 0.04 Ohm
• Resistance, Thermal, Junction To Case: 0.5 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 55 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 27 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 50A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Mounting Style: Through Hole
• Gate Charge Qg: 156 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFP260NPBF

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1000
1000
100
100
0.1
10
10
1
1
0.1
4.0
TOP
BOTTOM
T = 175 C
J
V
DS
5.0
V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
, Drain-to-Source Voltage (V)
°
T = 25 C
, Gate-to-Source Voltage (V)
J
6.0
1
°
4.5V
7.0
20µs PULSE WIDTH
T = 25 C
J
V
20µs PULSE WIDTH
DS
8.0
10
= 50V
°
9.0
100
10.0
1000
100
0.1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20 0
TOP
BOTTOM
I =
D
50A
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
IRFP260NPbF
20 40 60 80 100 120 140 160 180
1
20µs PULSE WIDTH
T = 175 C
J
10
4.5V
°
V
GS
°
=
10V
100
3