IRFP260NPBF International Rectifier, IRFP260NPBF Datasheet - Page 4

• Manufacturer Part Number: IRFP260NPBF
• Description: MOSFET N-CH 200V 50A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFP260NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 234nC @ 10V
• Input Capacitance (ciss) @ Vds: 4057pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Channel Type: N
• Current, Drain: 50 A
• Gate Charge, Total: 234 nC
• Package Type: TO-247AC
• Polarization: N-Channel
• Power Dissipation: 300 W
• Resistance, Drain To Source On: 0.04 Ohm
• Resistance, Thermal, Junction To Case: 0.5 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 55 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 27 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 50A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Mounting Style: Through Hole
• Gate Charge Qg: 156 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFP260NPBF

IRFP260NPbF
1000
4
100
8000
7000
6000
5000
4000
3000
2000
1000
0.1
10
1
0.2
0
1
T = 175 C
J
V
Coss
SD
0.6
Crss
Ciss
V DS , Drain-to-Source Voltage (V)
°
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10
T = 25 C
1.0
J
°
1.4
f = 1 MHZ
100
V
1.8
GS
= 0 V
1000
2.2
1000
100
10
1
16
12
1
8
4
0
T
T
Single Pulse
C
J
0
I =
= 25 C
= 175 C
D
OPERATION IN THIS AREA LIMITED
V
28A
DS
°
°
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
50
10
BY R
100
DS(on)
V
V
V
DS
DS
DS
100
= 160V
= 100V
= 40V
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150
10us
100us
1ms
10ms
1000
200