IRFS4115-7PPBF International Rectifier, IRFS4115-7PPBF Datasheet - Page 4

• Manufacturer Part Number: IRFS4115-7PPBF
• Description: MOSFET N-CH 150V 105A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4115-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11.8 mOhm @ 63A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 105A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 5320pF @ 50V
• Power - Max: 380W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 105 A
• Power Dissipation: 380 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 73 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
120
100
100
80
60
40
20
0.1
4
3
2
1
0
10
Fig 11. Typical C
0
1
25
0
0.0
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
20
T J = 175°C
50
V DS, Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
T C , CaseTemperature (°C)
Case Temperature
0.5
Forward Voltage
40
75
OSS
60
T J = 25°C
100
1.0
Stored Energy
80
125
100
1.5
V GS = 0V
150
120
140
2.0
175
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
10000
1000
1000
100
190
180
170
160
150
140
0.1
800
600
400
200
10
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
0.1
25
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 3.5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-toSource Voltage (V)
50
1
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
10
100
100μsec
1msec
10msec
DC
TOP
BOTTOM
125
100
150
14A
24A
63A
I D
1000
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175