IRFS4115-7PPBF International Rectifier, IRFS4115-7PPBF Datasheet - Page 5

• Manufacturer Part Number: IRFS4115-7PPBF
• Description: MOSFET N-CH 150V 105A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4115-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11.8 mOhm @ 63A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 105A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 5320pF @ 50V
• Power - Max: 380W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 105 A
• Power Dissipation: 380 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 73 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 15. Maximum Avalanche Energy vs. Temperature
240
200
160
120
80
40
0
25
1000
0.001
100
0.01
0.1
Starting T J , Junction Temperature (°C)
10
0.1
1
1.0E-06
1
50
1E-006
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
D = 0.50
Duty Cycle = Single Pulse
TOP
BOTTOM 1% Duty Cycle
I D = 63A
75
0.10
0.02
0.20
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
100
Single Pulse
1.0E-05
0.01
0.05
0.10
1E-005
Fig 14. Typical Avalanche Current vs.Pulsewidth
125
150
175
t 1 , Rectangular Pulse Duration (sec)
1.0E-04
0.0001
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
6. I
7. ΔT
tav (sec)
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
during avalanche).
25°C in Figure 14, 15).
t
D = Duty cycle in avalanche = t
Z
av
av =
thJC
D (ave)
τ
= Allowable avalanche current.
J
=
τ
Average time in avalanche.
J
(D, t
τ
Allowable rise in junction temperature, not to exceed T
1
Ci= τi/Ri
τ
1
Ci
= Average power dissipation per single avalanche pulse.
av
) = Transient thermal resistance, see Figures 13)
i/Ri
R
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
jmax
1
1.0E-03
R
1
0.001
. This is validated for every part type.
τ
2
R
τ
2
P
2
R
D (ave)
2
R
τ
3
3
R
τ
= 1/2 ( 1.3·BV·I
3
I
3
E
av
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
AS (AR)
= 2DT/ [1.3·BV·Z
τ
av
R
4
τ
4
R
4
·f
4
1.0E-02
= P
τ
C
τ
0.01
Ri (°C/W)
D (ave)
0.015402
0.056989 0.000065
0.180208 0.001377
0.146323 0.010705
av
) = DT/ Z
·t
th
av
]
τι (sec)
0.00001
jmax
thJC
jmax
is not exceeded.
1.0E-01
(assumed as
0.1
5