IXTH6N150 IXYS, IXTH6N150 Datasheet

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IXTH6N150

Manufacturer Part Number
IXTH6N150
Description
MOSFET N-CH 1500V 6A TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXTH6N150

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1500V (1.5kV)
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
2230pF @ 25V
Power - Max
540W
Mounting Type
Through Hole
Package / Case
TO-247-3
Vdss, Max, (v)
1500
Id(cont), Tc=25°c, (a)
6
Rds(on), Max, Tj=25°c, (?)
3.5
Ciss, Typ, (pf)
2230
Qg, Typ, (nc)
67
Trr, Typ, (ns)
1500
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTH6N150
Manufacturer:
RECOM
Quantity:
2 000
High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
D
, V
DD
D
D
= 250μA
= 250μA
= 0.5 • I
≤ V
GS
DS
= 0V
= 0V
DSS
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXTH6N150
- 55 ... +150
- 55 ... +150
1500
Characteristic Values
Min.
3.0
Maximum Ratings
1.13 / 10
1500
1500
±20
±30
500
540
150
300
260
Typ.
24
6
3
5
6
±100 nA
Nm/lb.in.
Max.
250 μA
5.0
3.5
25 μA
V/ns
mJ
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
V
I
R
TO-247
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Package
Fast Intrinsic Diode
Avalanche Rated
Molding Epoxies meet UL 94 V-0
Flammability Classification
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
D
=
=
≤ ≤ ≤ ≤ ≤
S
D
Tab = Drain
1500V
6A
3.5
= Drain
Tab
DS100233(01/10)
Ω Ω Ω Ω Ω

Related parts for IXTH6N150

IXTH6N150 Summary of contents

Page 1

... ±20V GSS DSS DS DSS 10V 0.5 • I DS(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTH6N150 Maximum Ratings 1500 = 1MΩ 1500 GS ±20 ± 500 ≤ 150° 540 - 55 ... +150 150 - 55 ... +150 300 260 1. Characteristic Values Min. Typ. 1500 3 ...

Page 2

... DSS D D25 0.5 • DSS D D25 36 0.21 Characteristic Values Min. Typ 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH6N150 TO-247 (IXTH) Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min 4.7 A 2.2 0.23 °C 2 1.0 °C ...

Page 3

... J 3 10V GS 7V 3.0 2.6 6V 2.2 1.8 1.4 1.0 5V 0.6 0 Value vs 125º 25º IXTH6N150 Fig. 2. Extended Output Characteristics @ Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C = 25ºC ...

Page 4

... Volts C iss C oss C rss Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 750V 10mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 100 R Limit DS(on 150º 25º Single Pulse 0.1 10 100 V - Volts DS IXTH6N150 = - 40ºC 25ºC 125º 25µs 100µs 1ms 10ms 1,000 10,000 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Second IXTH6N150 0.1 1 IXYS REF: T_6N150 (5P)1-19-10 ...

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