IXTH6N150 IXYS, IXTH6N150 Datasheet - Page 4

• Manufacturer Part Number: IXTH6N150
• Description: MOSFET N-CH 1500V 6A TO-247
• Manufacturer: IXYS

Specifications of IXTH6N150

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1500V (1.5kV)
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 2230pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 6
• Rds(on), Max, Tj=25°c, (?): 3.5
• Ciss, Typ, (pf): 2230
• Qg, Typ, (nc): 67
• Trr, Typ, (ns): 1500
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
20
18
16
14
12
10
10
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
3.5
0.3
0
f
= 1 MHz
5
4.0
0.4
Fig. 9. Forward Voltage Drop of
10
4.5
0.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
15
T
Intrinsic Diode
J
= 125ºC
0.6
5.0
V
V
V
DS
GS
SD
- Volts
20
- Volts
- Volts
T
J
5.5
0.7
= 125ºC
- 40ºC
25
25ºC
C iss
C oss
C rss
6.0
0.8
30
T
J
= 25ºC
0.9
6.5
35
1.0
7.0
40
100
0.1
10
10
12
10
9
8
7
6
5
4
3
2
1
0
1
8
6
4
2
0
10
0
0
V
I
I
T
T
Single Pulse
D
G
DS
J
C
R
= 3A
= 10mA
= 150ºC
DS(on)
= 25ºC
= 750V
1
10
Fig. 12. Forward-Bias Safe Operating Area
Limit
2
20
Fig. 8. Transconductance
100
3
Fig. 10. Gate Charge
Q
G
30
- NanoCoulombs
V
I
D
4
DS
- Amperes
- Volts
5
40
T
DC
J
IXTH6N150
= - 40ºC
1,000
25ºC
125ºC
6
50
25µs
100µs
1ms
10ms
7
60
8
10,000
70
9