IXTH6N150 IXYS, IXTH6N150 Datasheet - Page 2

no-image

IXTH6N150

Manufacturer Part Number
IXTH6N150
Description
MOSFET N-CH 1500V 6A TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXTH6N150

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1500V (1.5kV)
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
2230pF @ 25V
Power - Max
540W
Mounting Type
Through Hole
Package / Case
TO-247-3
Vdss, Max, (v)
1500
Id(cont), Tc=25°c, (a)
6
Rds(on), Max, Tj=25°c, (?)
3.5
Ciss, Typ, (pf)
2230
Qg, Typ, (nc)
67
Trr, Typ, (ns)
1500
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTH6N150
Manufacturer:
RECOM
Quantity:
2 000
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
V
V
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
Test Conditions
F
F
GS
R
DS
GS
G
GS
GS
= 3A, -di/dt = 100A/μs
= 6A, V
= 100V, V
= 3Ω (External)
= 20V, I
= 0V, V
= 10V, V
= 10V, V
= 0V
ADVANCE TECHNICAL INFORMATION
GS
DS
D
DS
= 0V, Note 1
DS
GS
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
4.0
Min.
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
2230
Typ.
0.21
170
6.5
Typ.
64
22
20
50
38
67
12
36
1.5
12
9
0.23 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
1.3
24
6
°C/W
mS
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
μs
A
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXTH) Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
IXTH6N150
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
2 - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

Related parts for IXTH6N150