STP4N150 STMicroelectronics, STP4N150 Datasheet

MOSFET N-CH 1500V 4A TO-220

STP4N150

Manufacturer Part Number
STP4N150
Description
MOSFET N-CH 1500V 4A TO-220
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheets

Specifications of STP4N150

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
1500V (1.5kV)
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3.5 S
Drain-source Breakdown Voltage
1500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4 A
Power Dissipation
160000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
4A
Drain Source Voltage Vds
1.5kV
On Resistance Rds(on)
7ohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5091-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP4N150
Manufacturer:
FSC
Quantity:
3 000
Part Number:
STP4N150
Manufacturer:
ST
0
Part Number:
STP4N150
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP4N150
0
Company:
Part Number:
STP4N150
Quantity:
2 900
Company:
Part Number:
STP4N150
Quantity:
2 900
Part Number:
STP4N150 P4N150
Manufacturer:
ST
0
Features
Application
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company’s proprietary edge termination structure,
gives the lowest R
charge and switching characteristics.
Table 1.
July 2009
STFW4N150
STW4N150
STP4N150
100% avalanche tested
Intrinsic capacitances and Qg minimized
High speed switching
Fully isolated TO-3PF plastic packages
Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Switching applications
Type
Order codes
STFW4N150
STW4N150
STP4N150
N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET
Device summary
1500 V
1500 V
1500 V
V
DSS
DS(on)
R
per area, unrivalled gate
DS(on)
< 7 Ω
< 7 Ω
< 7 Ω
max
Marking
W4N150
P4N150
4N150
4 A
4 A
4 A
I
D
160 W
160 W
Doc ID 11262 Rev 9
63 W
Pw
Figure 1.
STP4N150, STW4N150
TO-220
in TO-220, TO-247, TO-3PF
Package
TO-3PF
TO-220
TO-247
1
Internal schematic diagram.
2
3
TO-3PF
STFW4N150
1
2
3
Packaging
Tube
Tube
Tube
TO-247
www.st.com
1
2
1/15
3
15

Related parts for STP4N150

STP4N150 Summary of contents

Page 1

... The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest R per area, unrivalled gate DS(on) charge and switching characteristics. Table 1. Device summary Order codes STFW4N150 STP4N150 STW4N150 July 2009 STP4N150, STW4N150 max 160 160 W TO-220 Figure 1. ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/ Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STFW4N150, STP4N150, STW4N150 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS Drain current (continuous °C C Drain current (continuous 100 °C C (1) I Drain current (pulsed Total dissipation at T TOT Insulation withstand voltage (RMS) V from all three leads to external heat ISO sink (t=1 s ...

Page 4

... Max rating Max rating ± Parameter Test conditions MHz 750 4.7 Ω Figure 600 Figure 20 Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 Min. Typ. Max. Unit = 0 1500 GS = 125 ° 250 µ Min. Typ. Max 3.5 D 1300 - 120 µA 500 µA ± 100 nA ...

Page 5

... STFW4N150, STP4N150, STW4N150 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1 ...

Page 6

... Safe operating area for TO-247 6/15 Figure 3. Figure 5. K AM03935v1 δ=0.5 0.2 0.1 10µ 100µs 1ms 10ms Single pulse -2 10 1000 V ( Figure 7. Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 Thermal impedance for TO-220 Thermal impedance for TO-3PF TO3PF 0.05 0. Thermal impedance for TO-247 ...

Page 7

... STFW4N150, STP4N150, STW4N150 Figure 8. Output characteristics Figure 10. Transconductance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Doc ID 11262 Rev 9 Electrical characteristics 7/15 ...

Page 8

... Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics Figure 18. Maximum avalanche energy vs temperature 8/15 STFW4N150, STP4N150, STW4N150 Figure 15. Normalized on resistance vs temperature Figure 17. Normalized B Doc ID 11262 Rev 9 vs temperature VDSS ...

Page 9

... STFW4N150, STP4N150, STW4N150 3 Test circuits Figure 19. Switching times test circuit for resistive load D.U. Figure 21. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 23. Unclamped inductive waveform Figure 20. Gate charge test circuit 3.3 2200 µ ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/15 STFW4N150, STP4N150, STW4N150 Doc ID 11262 Rev 9 ® ...

Page 11

... STFW4N150, STP4N150, STW4N150 Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2 ...

Page 12

... S 12/15 TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...

Page 13

... STFW4N150, STP4N150, STW4N150 DIM Dia TO-3PF mechanical data mm. min. typ 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 5.45 15.30 9.80 10 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 Doc ID 11262 Rev 9 Package mechanical data max. 5.70 3.20 3.50 2.20 1 ...

Page 14

... Updated unit on 6 Added new packages: TO-220FH, TO-3PF 7 Remove package TO-220FH Added P value for TO-3PF P TOT 8 maximum ratings) Added new figures: 9 Figure 5: Thermal impedance for TO-3PF and Doc ID 11262 Rev 9 STFW4N150, STP4N150, STW4N150 Changes (Table 2: Absolute TOT Figure 4: Safe operating area for TO-3PF ...

Page 15

... STFW4N150, STP4N150, STW4N150 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

Related keywords