STP4N150 STMicroelectronics, STP4N150 Datasheet

MOSFET N-CH 1500V 4A TO-220

STP4N150

Manufacturer Part Number
STP4N150
Description
MOSFET N-CH 1500V 4A TO-220
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheets

Specifications of STP4N150

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
1500V (1.5kV)
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3.5 S
Drain-source Breakdown Voltage
1500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4 A
Power Dissipation
160000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
4A
Drain Source Voltage Vds
1.5kV
On Resistance Rds(on)
7ohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5091-5

Available stocks

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STP4N150
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Company:
Part Number:
STP4N150
Quantity:
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Part Number:
STP4N150 P4N150
Manufacturer:
ST
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Order codes
General features
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.
Applications
August 2006
Avalanche ruggedness
Gate charge minimized
Very low intrinsic capacitances
High speed switching
Switching application
STW4N150
STP4N150
Type
Part number
STW4N150
STP4N150
(@Tjmax)
1500 V
1500 V
V
DSS
R
< 7 Ω
< 7 Ω
DS(on)
N-channel 1500V - 5Ω - 4A - TO-220/TO-247
W4N150
Marking
P4N150
Very high PowerMESH™ Power MOSFET
4A
4A
I
D
Rev 4
Internal schematic diagram
Package
TO-220
TO-247
TO-220
1
2
3
STW4N150
STP4N150
Packaging
TO-247
Tube
Tube
www.st.com
1/14
14

Related parts for STP4N150

STP4N150 Summary of contents

Page 1

... Part number STP4N150 STW4N150 August 2006 N-channel 1500V - 5Ω TO-220/TO-247 Very high PowerMESH™ Power MOSFET R I DS(on) D < 7 Ω 4A < 7 Ω 4A Internal schematic diagram Marking P4N150 W4N150 Rev 4 STP4N150 STW4N150 TO-220 TO-247 Package Packaging TO-220 Tube TO-247 Tube 1/14 www.st.com 14 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STP4N150 - STW4N150 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STP4N150 - STW4N150 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) Drain current (pulsed Total dissipation at T TOT Derating factor T Operating junction temperature j T Storage temperature stg 1. Pulse width limited by safe operating area Table 2 ...

Page 4

... Max Rating Max Rating ± Parameter Test conditions MHz 750 4.7 Ω (see Figure 18 600 (see Figure 19) STP4N150 - STW4N150 Min. Typ. Max. Unit = 0 1500 GS = 125° 250 µ Min. Typ. Max 3.5 D 1300 120 µA 500 µA ± 100 µ Ω ...

Page 5

... STP4N150 - STW4N150 Table 6. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1 ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 3. Safe operating area for TO-247 Figure 5. Output characterisics 6/14 STP4N150 - STW4N150 Figure 2. Thermal impedance for TO-220 Figure 4. Thermal impedance for TO-247 Figure 6. Transfer characteristics ...

Page 7

... STP4N150 - STW4N150 Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/14 ...

Page 8

... Electrical characteristics Figure 13. Source-drain diode forward characteristics Figure 15. Maximum avalanche energy vs temperature 8/14 STP4N150 - STW4N150 Figure 14. Normalized B VDSS vs temperature ...

Page 9

... STP4N150 - STW4N150 3 Test circuit Package mechanical data Figure 16. Unclamped inductive load test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load switching and diode recovery times Test circuit Package mechanical data Figure 17. Unclamped inductive waveform Figure 19 ...

Page 10

... These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: 10/14 STP4N150 - STW4N150 www.st.com ...

Page 11

... STP4N150 - STW4N150 DIM L20 L30 øP Q TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2.95 Package mechanical data inch MIN ...

Page 12

... STP4N150 - STW4N150 inch MIN. TYP. MAX. 0.19 0.20 0.086 0.102 0.039 0.055 0.079 0.094 0.118 0.134 0.015 0.03 0.781 0.793 0.608 ...

Page 13

... STP4N150 - STW4N150 5 Revision history Table 7. Revision history Date 29-Mar-2005 07-Jul-2005 07-Oct-2005 10-Aug-2006 Revision 1 First release 2 Removed TO-220FP 3 Complete version 4 New template, no content change Revision history Changes 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STP4N150 - STW4N150 ...

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