IXFT17N80Q IXYS, IXFT17N80Q Datasheet
IXFT17N80Q
Specifications of IXFT17N80Q
Related parts for IXFT17N80Q
IXFT17N80Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved IXFH 17N80Q IXFT 17N80Q g Maximum Ratings 800 = 1 MΩ 800 GS ±20 ± 1.0 ≤ DSS 400 -55 ... +150 150 -55 ... +150 300 1 ...
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... -di/dt = 100 A/µ Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. Max. , pulse test 9 17 ...
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... Volts D S Fig Norm alized to I DS(on) Value vs 10V GS 2 125ºC J 2.2 1.9 1.6 1 Amperes D © 2003 IXYS All rights reserved 35 = 10V 3.1 2 2.5 2.2 1.9 1.6 1.3 0.7 0 D25 25º IXFH 17N80Q IXFT 17N80Q Fig. 2. Extended Output Characteristics @ 25 deg ...
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... 0.4 0.5 0.6 0.7 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 5 25º 0.9 1 1.1 1 ...