IXFT17N80Q IXYS, IXFT17N80Q Datasheet - Page 4

• Manufacturer Part Number: IXFT17N80Q
• Description: MOSFET N-CH 800V 17A TO-268(D3)
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFT17N80Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 400W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
10000
1000
100
25
20
15
10
50
40
30
20
10
10
5
0
0
0.4
3
0
Fig. 9. Source Current vs. Source-To-
f = 1MHz
0.5
5
3.5
T
J
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
= 120ºC
0.6
10
-40ºC
25ºC
4
T
Drain Voltage
0.7
V
15
V
J
V
= 125ºC
G S
S D
DS
- Volts
- Volts
0.8
4.5
- Volts
20
0.9
25
5
T
C iss
C oss
C rss
J
30
1
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
= 25ºC
5.5
1.1
35
1.2
40
6
0.01
0.1
40
35
30
25
20
15
10
10
5
0
8
6
4
2
0
1
Fig. 12. Maxim um Transient Therm al
0
0
1
T
V
I
I
J
D
G
DS
= -40ºC
5
= 8.5A
= 10mA
Fig. 8. Transconductance
125ºC
25ºC
= 400V
20
Fig. 10. Gate Charge
Pulse Width - milliseconds
10
Q
Resistance
10
G
15
I
- nanoCoulombs
40
D
- Amperes
20
IXFH 17N80Q
IXFT 17N80Q
60
25
100
30
80
6,534,343
35
1000
100
40