IXFT17N80Q IXYS, IXFT17N80Q Datasheet - Page 3

• Manufacturer Part Number: IXFT17N80Q
• Description: MOSFET N-CH 800V 17A TO-268(D3)
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFT17N80Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 400W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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2.8
2.5
2.2
1.9
1.6
1.3
0.7
18
16
14
12
10
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
1
0
0
0
V
GS
Fig. 5. R
= 10V
Fig. 3. Output Characteristics
5
Fig. 1. Output Characteristics
2
5
10
DS(on)
10
4
@ 125 Deg. C
V
I
Value vs. I
@ 25 Deg. C
D
D S
V
V
15
- Amperes
D S
Norm alized to I
GS
- Volts
T
15
- Volts
V
J
6
= 10V
= 125ºC
GS
20
6V
= 10V
D
20
8
T
J
25
= 25ºC
5V
6V
5V
D25
10
25
30
12
30
35
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
18
16
14
12
10
35
30
25
20
15
10
8
6
4
2
0
5
0
1
Fig. 2. Extended Output Characteristics
-50
-50
Fig. 4. R
0
V
-25
-25
GS
Fig. 6. Drain Current vs. Case
5
DS(on)
= 10V
Junction Tem perature
T
0
0
T
C
J
- Degrees Centigrade
Norm alized to I
- Degrees Centigrade
@ 25 deg. C
10
Tem perature
25
25
I
V
D
V
D S
= 17A
GS
15
50
50
- Volts
= 10V
IXFH 17N80Q
IXFT 17N80Q
7V
75
75
20
D25
I
D
100
100
6V
5V
Value vs.
= 8.5A
25
125
125
150
150
30