TPCP8101(TE85L,F,M Toshiba, TPCP8101(TE85L,F,M Datasheet

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TPCP8101(TE85L,F,M

Manufacturer Part Number
TPCP8101(TE85L,F,M
Description
MOSFET P-CH 20V 5.6A 2-3V1K
Manufacturer
Toshiba
Datasheet

Specifications of TPCP8101(TE85L,F,M

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 2.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
19nC @ 5V
Input Capacitance (ciss) @ Vds
1550pF @ 10V
Power - Max
840mW
Mounting Type
Surface Mount
Package / Case
2-3V1K
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notebook PC Applications
Portable Equipment Applications
Absolute Maximum Ratings
Circuit Configuration
Small footprint due to small and thin package
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement model: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single-pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: For Notes 1 to 5, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristic
1
8
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
GS
7
2
DC
Pulse
= 20 kΩ)
DSS
th
(Note 2a)
(Note 2b)
6
= -0.5 to -1.2 V
3
(Note 1)
(Note 1)
(Note 4)
(V
(t = 5 s)
(t = 5 s)
= -10 µA (max) (V
DS
= -10 V, I
4
5
DS (ON)
(Ta = 25°C)
Symbol
TPCP8101
fs
V
V
V
E
E
T
I
T
I
DGR
P
P
| = 14 S (typ.)
DSS
GSS
I
DP
AR
AS
AR
stg
D
ch
D
D
D
= 24 mΩ (typ.)
= -200 µA)
DS
= -20 V)
-55~150
Rating
0.168
-22.4
1.68
0.84
20.3
-5.6
-5.6
150
-20
-20
± 8
1
Unit
Marking
mJ
mJ
°C
°C
W
W
V
V
V
A
A
8
1
(Note 5)
Weight: 0.017 g (typ.)
JEDEC
JEITA
TOSHIBA
1. Source
2. Source
3. Source
4. Gate
0.475
8101
S
7
2
0.33±0.05
8
1
0.025
0.65
2.9±0.1
6
0.17±0.02
3
0.05
S
Lot No.
5. Drain
6. Drain
7. Drain
8. Drain
M
5
4
2-3V1K
TPCP8101
A
4
5
2006-11-17
B
0.28
1.12
1.12
0.28
A
0.8±0.05
+0.1
+0.13
+0.13
+0.1
-0.11
-0.12
-0.12
-0.11
Unit: mm
0.05
M
B

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TPCP8101(TE85L,F,M Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Thermal Characteristics Characteristics Thermal resistance, channel to ambient ( (Note 2a) Thermal resistance, channel to ambient ( (Note 2b) Note 1: Ensure that the channel temperature does not exceed 150°C during use of the ...

Page 3

Electrical Characteristics Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time ...

Page 4

I – −5 −5 −2.5 −1.9 −1.8 −1.7 −2 −4.5 −4 −3 −4 −1.6 −3 −2 −1 −1.4 V −1 Common source Ta = 25°C Pulse test 0 −0.2 −0.4 −0.6 −0.8 0 Drain−source ...

Page 5

R – (ON) 160 Common source Pulse test 120 80 −2 −1.8 V −5 −1 −1.4, −2 −2 −1.4, −2.8, ...

Page 6

Device mounted on a glass- epoxy board (b) (Note 2b) 100 10 1 0.001 0.01 0.1 Pulse width t Safe operating area − 100 I D max (pulse)* 1 ms* − ms* − Single nonrepetitive ...

Page 7

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

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