TPCP8101(TE85L,F,M Toshiba, TPCP8101(TE85L,F,M Datasheet - Page 6

• Manufacturer Part Number: TPCP8101(TE85L,F,M
• Description: MOSFET P-CH 20V 5.6A 2-3V1K
• Manufacturer: Toshiba

Specifications of TPCP8101(TE85L,F,M

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.6A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 19nC @ 5V
• Input Capacitance (ciss) @ Vds: 1550pF @ 10V
• Power - Max: 840mW
• Mounting Type: Surface Mount
• Package / Case: 2-3V1K
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

−
−
−
100
0.1
−
10
−
1
0.1
*: Single nonrepetitive pulse
1000
Curves must be derated
linearly with increase in
temperature.
I D max (pulse)*
Ta = 25°C
100
10
1
0.001
Safe operating area
−
1
10 ms*
0.01
Drain−sour
−
10
1 ms*
0.1
V DSS max
Pulse width t
Device mounted on a glass-
epoxy board (b) (Note 2b)
−
r
100
th(j−c)
6
1
− t
w
w
(s)
Device mounted on a glass-
epoxy board (a) (Note 2a)
10
100
Single pulse
1000
TPCP8101
2006-11-17