TPCP8101(TE85L,F,M Toshiba, TPCP8101(TE85L,F,M Datasheet - Page 6
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TPCP8101(TE85L,F,M
Manufacturer Part Number
TPCP8101(TE85L,F,M
Description
MOSFET P-CH 20V 5.6A 2-3V1K
Manufacturer
Toshiba
Datasheet
1.TPCP8101TE85LFM.pdf
(7 pages)
Specifications of TPCP8101(TE85L,F,M
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 2.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
19nC @ 5V
Input Capacitance (ciss) @ Vds
1550pF @ 10V
Power - Max
840mW
Mounting Type
Surface Mount
Package / Case
2-3V1K
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
−
−
−
100
0.1
−
10
−
1
0.1
*: Single nonrepetitive pulse
1000
Curves must be derated
linearly with increase in
temperature.
I D max (pulse)*
Ta = 25°C
100
10
1
0.001
Safe operating area
−
1
10 ms*
0.01
Drain−sour
−
10
1 ms*
0.1
V DSS max
Pulse width t
Device mounted on a glass-
epoxy board (b) (Note 2b)
−
r
100
th(j−c)
6
1
− t
w
w
(s)
Device mounted on a glass-
epoxy board (a) (Note 2a)
10
100
Single pulse
1000
TPCP8101
2006-11-17