2SJ360(TE12L,F) Toshiba, 2SJ360(TE12L,F) Datasheet - Page 5

• Manufacturer Part Number: 2SJ360(TE12L,F)
• Description: MOSFET P-CH 60V 1A SC-62
• Manufacturer: Toshiba

Specifications of 2SJ360(TE12L,F)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 730 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 6.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 155pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 2-5K1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

−0.005
−0.05
−0.03
−0.01
−0.5
−0.3
−0.1
−10
−5
−3
−1
−0.1
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
I D max (continuous)
I D max (pulsed) *
Tc = 25°C
DC operation
−0.3
Ta = 25°C
Drain-source voltage V DS (V)
SAFE OPERATING AREA
500
300
100
−1
50
30
10
1 m
5
3
1
Single pulse
−3
10 m
−10
10 ms *
V DSS max
1 ms *
−30
100 m
−100
Pulse width t
r
th
5
− t
1
w
w
Mounted on ceramic substrate
(s)
40mm×50mm×0.8mm
10
Single
100
15 × 15 × 0.8
20 × 30 × 0.8
1000
2009-09-29
2SJ360