2SJ360(TE12L) Toshiba, 2SJ360(TE12L) Datasheet

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2SJ360(TE12L)

Manufacturer Part Number
2SJ360(TE12L)
Description
MOSFET P-CH 60V 1A PW-MINI
Manufacturer
Toshiba
Datasheet

Specifications of 2SJ360(TE12L)

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
730 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
6.5nC @ 10V
Input Capacitance (ciss) @ Vds
155pF @ 10V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
PW-MINI
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
High Speed, High current Switching Applications
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
4-V gate drive
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation
Drain power dissipation
Channel temperature
Storage temperature range
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Thermal resistance, channel to
ambient
This transistor is an electrostatic-sensitive device. Please handle with caution.
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
GS
DC
Pulse (Note 1)
= 20 k Ω)
: I
: V
DSS
th
(Note 1)
(Note 2)
= −0.8 to −2.0 V (V
= −100 μA (max) (V
(Ta = 25°C)
R
Symbol
Symbol
th (ch−a)
V
V
V
T
I
T
: R
: |Y
P
P
DGR
GSS
DSS
I
DP
stg
D
ch
D
D
DS (ON)
fs
2SJ360
| = 0.9 S (typ.)
DS
DS
= −10 V, I
= 0.55 Ω (typ.)
−55 to 150
= −60 V)
Rating
Max
250
−60
−60
±20
150
0.5
1.5
−1
−4
1
D
= −1 mA)
°C / W
Unit
Unit
°C
°C
W
W
V
V
V
A
A
Weight: 0.05 g (typ.)
JEDEC
JEITA
TOSHIBA
2
−π−MOSV)
2−5K1B
SC-62
2009-09-29
2SJ360
Unit: mm

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2SJ360(TE12L) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. ...

Page 2

... Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. (Ta = 25° ...

Page 3

I – −1.0 Common source − 25°C −4.5 −8 Pulse test −5 −0.8 −6 −0.6 −0.4 −0 −2 −0.2 −0.4 −0.6 −0.8 0 Drain-source voltage V DS (V) I – ...

Page 4

(ON) Common source 2 −2 A Pulse test 1.6 1 − −4 V −1.5 0.8 0 − −80 − ...

Page 5

Single pulse 300 100 SAFE OPERATING AREA −10 − max (pulsed − max (continuous −1 −0.5 DC operation ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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