TPCA8014-H(TE12L,QM Toshiba, TPCA8014-H(TE12L,QM Datasheet - Page 5

• Manufacturer Part Number: TPCA8014-H(TE12L,QM
• Description: MOSFET N-CH 40V 30A 8-SOPA
• Manufacturer: Toshiba

Specifications of TPCA8014-H(TE12L,QM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 1365pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 8-SOPA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCA8014-H(TE12L,Q; TPCA8014HTE12LQTR

10000
1000
100
20
16
12
50
40
30
20
10
10
8
4
0
0
−80
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25 °C
V DS
Common source
Pulse test
V GS = 4.5 V
−40
Drain-source voltage V
Total gate charge Q
Ambient temperature Ta (
10
Dynamic input/output
Capacitance – V
V GS
10
0
1
characteristics
R
DS (ON)
24
40
I D = 30 A
30
− Ta
Common source
I D = 30 A
Ta = 25 °C
Pulse test
15
80
10
20
g
DS
DS
V DD = 32 V
15
(nC)
7.5
(V)
120
°
C iss
C oss
C rss
C)
7.5
100
160
30
20
16
12
8
4
0
5
1000
100
2.0
1.5
1.0
0.5
0.1
10
0
−80
1
0
Common source
Ta = 25 °C
Pulse test
Common source
COMMON SOURCE
V DS = 10 V
V DS = 10 V
I D = 1 mA
I D = 1 mA
Pulse test
PULSE TEST
−40
Drain-source voltage V
Ambient temperature Ta (
−
0.2
0
10
−
I
0.4
DR
V
1
th
– V
40
– Ta
5
DS
−
0.6
80
TPCA8014-H
DS
3
V GS = 0 V
−
°
0.8
(V)
120
C)
2006-11-17
−
160
1.0