2SK3798(Q) Toshiba, 2SK3798(Q) Datasheet - Page 4

• Manufacturer Part Number: 2SK3798(Q)
• Description: MOSFET N-CH 900V 4A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3798(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: 2-10U1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
100
10
10
60
40
20
8
6
4
2
0
−80
1
0
0.1
0
COMMON SOURCE
V GS = 0 V
f = 1 MHz
Tc = 25°C
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
V GS = 10 V
PULSE TEST
CASE TEMPERATURE Tc (°C)
CASE TEMPERATURE Tc (°C)
−40
40
CAPACITANCE – V
0
1
R
DS (ON)
P
D
I D = 4 A
40
80
3
– Tc
5
2
– Tc
10
80
DS
120
DS
120
30 50
1
C oss
C iss
C rss
(V)
160
100
160
4
500
400
300
200
100
0.5
0.3
0.1
10
0
−80
5
3
1
5
4
3
2
1
0
0
0
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
V DS = 10 V
I D = 1 mA
PULSE TEST
COMMON SOURCE
TOTAL GATE CHARGE Q
V DS
CASE TEMPERATURE Tc (°C)
−40
PULSE TEST
Tc = 25°C
DYNAMIC INPUT / OUTPUT
−0.4
10
CHARACTERISTICS
V GS
10
3
0
I
V DD = 100 V
DR
V
th
−0.8
– V
40
20
– Tc
1
V GS = 0, −1 V
DS
COMMON SOURCE
I D = 4 A
Tc = 25°C
PULSE TEST
80
200
−1.2
30
g
DS
(nC)
120
2009-09-29
2SK3798
400
(V)
−1.6
160
40
16
0
20
12
8
4