2SK3798(Q) Toshiba, 2SK3798(Q) Datasheet - Page 5

• Manufacturer Part Number: 2SK3798(Q)
• Description: MOSFET N-CH 900V 4A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3798(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: 2-10U1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
100
0.1
10
1
1
I D max (CONTINUOUS) *
I D max (PULSED) *
※ SINGLE NONREPETITIVE PULSE Tc=25℃
CURVES MUST BE DERATED LINEARLY WITH
INCREASE IN TEMPERATURE.
DRAIN-SOURCE VOLTAGE V
SAFE OPERATING AREA
0.001
DC OPERATION
0.01
0.1
10
10μ
1
Tc = 25°C
10
0.02
0.05
0.1
Duty=0.5
0.2
0.01
100μ
100
1 ms *
100 μs *
DS
SINGLE PULSE
(V)
1ｍ
PULSE WIDTH t
1000
r
5
th
10ｍ
– t
w
R
V
G
DD
w
= 25 Ω
= 90 V, L = 39.6mH
400
300
200
100
(s)
−15 V
0
100ｍ
25
15 V
TEST CIRCUIT
CHANNEL TEMPERATURE (INITIAL)
P DM
50
Duty = t/T
R th (ch-c) = 3.125°C/W
t
1
T
75
E
T
AS
ch
Ε AS
– T
V
(°C)
DD
=
ch
100
WAVE FORM
B
10
1
2
VDSS
I
⋅
AR
L
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
2009-09-29
B VDSS
2SK3798
V
DS
B VDSS
150
−
V DD
⎞
⎟
⎟
⎠