2SK2719(F) Toshiba, 2SK2719(F) Datasheet - Page 3

• Manufacturer Part Number: 2SK2719(F)
• Description: MOSFET N-CH 900V 3A 2-16C1B
• Manufacturer: Toshiba

Specifications of 2SK2719(F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.1
0.5
0.3
0.1
10
5
4
3
2
1
0
6
5
4
3
2
1
0
5
3
0.1
0
0
Common source
Tc = 25°C
Pulse test
Common source
V DS = 20 V
Pulse test
2
0.3
Drain-source voltage V
Gate-source voltage V
4
Drain current I
4
8
⎪Y
1
I
I
D
D
Tc = −55°C
fs
– V
– V
100
⎪ – I
6
DS
GS
Tc = −55°C
12
D
3
D
100
10
25
Common source
V DS = 20 V
Pulse test
25
GS
8
DS
(A)
8
(V)
(V)
V GS = 4 V
16
10
10
5.25
6
4.75
4.5
5.5
5
20
12
30
3
0.5
25
20
15
10
30
10
5
4
3
2
1
0
5
0
5
3
1
0.1
0
0
Common source
Tc = 25°C
V GS = 10 V
Pulse test
0.3
10
Drain-source voltage V
4
Gate-source voltage V
Drain current I
10
R
20
V
DS (ON)
8
1
I
DS
D
– V
– V
V GS = 4.5 V
8
5.75
DS
6
5.5
GS
– I
30
12
3
5.25
D
D
5
I D = 3 A
GS
DS
(A)
1.5
0.8
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
(V)
(V)
16
40
10
2009-09-29
2SK2719
50
20
30