2SK2719(F) Toshiba, 2SK2719(F) Datasheet - Page 4

• Manufacturer Part Number: 2SK2719(F)
• Description: MOSFET N-CH 900V 3A 2-16C1B
• Manufacturer: Toshiba

Specifications of 2SK2719(F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2000
1000
500
300
100
150
100
20
16
12
50
30
10
50
−80
8
4
0
5
0.1
0
0
Common source
V GS = 10 V
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
Pulse test
−40
0.3
Drain-source voltage V
Case temperature Tc (°C)
Case temperature Tc (°C)
40
Capacitance – V
1
0
R
DS (ON)
P
D
1.5
40
80
3
– Tc
– Tc
I D = 3 A
10
80
DS
DS
120
(V)
120
0.8
30
C iss
C oss
C rss
160
100
160
4
0.05
0.03
0.01
500
400
300
200
100
0.5
0.3
0.1
10
−80
5
3
1
5
4
3
2
1
0
0
0
0
5
Common source
Tc = 25°C
Pulse test
Dynamic Input/Output Characteristics
−0.2
−40
V DS
Drain-source voltage V
8
Total gate charge Q
10
Case temperature Tc (°C)
3
−0.4
0
V GS
16
I
DR
V
1
V DD = 100 V
th
−0.6
40
– V
– Tc
DS
V GS = 0, −1 V
24
−0.8
g
80
Common source
V DS = 10 V
I D = 1 mA
Pulse test
DS
Common source
Tc = 25°C
I D = 3 A
Pulse test
400
(nC)
200
(V)
32
−1.0
120
2009-09-29
2SK2719
−1.2
160
40
20
16
12
8
4
0