2SK3444(TE24L,Q) Toshiba, 2SK3444(TE24L,Q) Datasheet - Page 3

• Manufacturer Part Number: 2SK3444(TE24L,Q)
• Description: MOSFET N-CH 200V 25A SC-97
• Manufacturer: Toshiba

Specifications of 2SK3444(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 2080pF @ 10V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: 2-9F1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
50
40
30
20
10
50
40
30
20
10
10
0
0
1
0
0
1
Common
source
Tc = 25°C
Pulse test
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
Drain-source voltage V
Gate-source voltage V
2
4
100
15
Drain current I
Tc = −55°C
10
4
8
⎪Y
I
I
D
D
100
fs
Tc = −55°C
– V
– V
25
10
⎪ – I
DS
GS
12
D
6
D
9.5
GS
DS
(A)
V GS = 6.5 V
(V)
(V)
16
8
25
8.5
7.5
9
8
7
100
10
20
3
1000
100
100
80
60
40
20
10
0
4
3
2
1
0
0
0
1
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
Drain-source voltage V
4
4
Gate-source voltage V
Drain current I
R
V
DS (ON)
8
8
I
DS
D
15
– V
10
– V
V GS = 10 V
DS
GS
– I
12
12
D
D
V GS = 7 V
GS
DS
(A)
15
Common source
Tc = 25°C
Pulse test
12
11
10
9
8
(V)
(V)
I D = 25 A
16
16
12
6
2009-09-29
2SK3444
100
20
20