2SK3444(TE24L,Q) Toshiba, 2SK3444(TE24L,Q) Datasheet - Page 4

• Manufacturer Part Number: 2SK3444(TE24L,Q)
• Description: MOSFET N-CH 200V 25A SC-97
• Manufacturer: Toshiba

Specifications of 2SK3444(TE24L,Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 2080pF @ 10V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: 2-9F1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
160
120
100
200
160
120
80
40
10
80
40
10
−80
0
0.1
0
Common source
V GS = 10 V
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
−40
40
Drain-source voltage V
Case temperature Tc (°C)
Case temperature Tc (°C)
Capacitance – V
0
1
R
80
DS (ON)
P
I D = 25 A
D
40
– Tc
– Tc
120
80
10
DS
DS
(V)
160
12
120
C oss
C iss
C rss
6
160
100
200
4
100
200
160
120
0.1
10
80
40
−80
1
6
5
4
3
2
1
0
0
0
0
10
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Common source
Tc = 25°C
Pulse test
V DS
−0.2
Dynamic input/output characteristics
5
−40
20
Drain-source voltage V
−0.4
Total gate charge Q
Case temperature Tc (°C)
3
V DS = 40 V
V GS
0
1
−0.6
40
I
DR
V
V GS = 0 V
160
th
−0.8
– V
40
– Tc
DS
60
−1.0
80
g
80
Common source
I D = 25 A
Tc = 25°C
Pulse test
DS
(nC)
−1.2
(V)
80
120
−1.4
2009-09-29
2SK3444
−1.6
100
160
20
16
12
8
4
0