BSS83P L6327 Infineon Technologies, BSS83P L6327 Datasheet
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Manufacturer Part Number
BSS83P L6327
Description
MOSFET P-CH 60V 0.33A SOT23
Manufacturer
Infineon Technologies
Specifications of BSS83P L6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 Ohm @ 330mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
330mA
Vgs(th) (max) @ Id
2V @ 80µA
Gate Charge (qg) @ Vgs
3.57nC @ 10V
Input Capacitance (ciss) @ Vds
78pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
2 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.33 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSS83PL6327XT
Rev. 1.2
SIPMOS
Features
·
·
·
·
·
Type
BSS 83 P
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Enhancement mode
A
A
A
jmax
A
P-Channel
Avalanche rated
Logic Level
d v /d t rated
= -0.33 A, V
= -0.33 A , V
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 150 °C
Small-Signal-Transistor
DS
DD
= -48 V, d i /d t = 200 A/µs,
= -25 V, R
Package
PG-SOT-23
j
= 25 °C, unless otherwise specified
GS
= 25
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
Tape and Reel
L6327: 3000pcs/r.
W
jmax
Page 1
Symbol
I
I
E
E
d v /d t
V
P
T
D
D puls
AR
GS
tot
j ,
AS
T
Marking
YAs
stg
Pin 1
-55...+150
55/150/56
G
V
R
I
Value
0.036
-0.33
-0.27
-1.32
D
0.36
±
DS
9.5
DS(on)
20
6
3
PIN 2
S
2006-12-05
-0.33
BSS 83 P
-60
2
1
PIN 3
kV/µs
V
W
°C
Unit
A
mJ
VPS05161
D
V
W
A
2
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BSS83P L6327 Summary of contents
SIPMOS Small-Signal-Transistor Features · P-Channel · Enhancement mode · Avalanche rated · Logic Level · rated Type Package BSS 83 P PG-SOT-23 Maximum Ratings, Parameter Continuous drain current ° ...
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point ( Pin 3 ) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage ...
Electrical Characteristics Parameter Dynamic Characteristics Transconductance ³ DS(on)max D Input capacitance - MHz GS DS Output capacitance V = ...
Electrical Characteristics Parameter Dynamic Characteristics Gate to source charge -0. Gate to drain charge -0. Gate charge total V = ...
Power Dissipation tot A BSS 83 P 0.38 W 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0. Safe operating area ...
Typ. output characteristic =25° parameter µs p BSS 83 P -0. tot -0.60 -0.50 ...
Drain-source on-state resistance DS(on) j parameter : I = -0. BSS 83 P 5.5 W 4.5 4.0 3.5 3.0 98% 2.5 2.0 typ 1.5 1.0 0.5 0.0 -60 - ...
Avalanche energy para -0. - 105 Drain-source ...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...
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