BSS83P L6327 Infineon Technologies, BSS83P L6327 Datasheet - Page 8

• Manufacturer Part Number: BSS83P L6327
• Description: MOSFET P-CH 60V 0.33A SOT23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS83P L6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 330mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 330mA
• Vgs(th) (max) @ Id: 2V @ 80µA
• Gate Charge (qg) @ Vgs: 3.57nC @ 10V
• Input Capacitance (ciss) @ Vds: 78pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.33 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSS83PL6327XT

Avalanche energy
E
para.: I
Drain-source breakdown voltage
V
Rev. 1.2
AS
(BR)DSS
mJ
V
-72
-68
-66
-64
-62
-60
-58
-56
-54
= f ( T
10
8
7
6
5
4
3
2
1
0
-60
25
D
BSS 83 P
= -0.33 A , V
= f ( T
j
)
45
-20
j
)
65
20
85
DD
60
105
= -25 V, R
100
125
°C
°C
GS
T
T
j
j
= 25
165
180
Page 8
Typ. gate charge
V
parameter: I
GS
V
-16
-12
-10
= f ( Q
-8
-6
-4
-2
0
0.0
BSS 83 P
0.4
Gate
D
0,2
0.8
= -0.33 A pulsed
)
V
DS max
1.2
1.6
2.0
2.4
2006-12-05
0,8
BSS 83 P
2.8
V
DS max
nC
Q
Gate
3.4