BSR315P L6327 Infineon Technologies, BSR315P L6327 Datasheet
BSR315P L6327
Manufacturer Part Number
BSR315P L6327
Description
MOSFET P-CH 60V 620MA SC-59
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSR315P_L6327.pdf
(9 pages)
Specifications of BSR315P L6327
Package / Case
SC-59
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
800 mOhm @ 620mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
620mA
Vgs(th) (max) @ Id
2V @ 160µA
Gate Charge (qg) @ Vgs
6nC @ 10V
Input Capacitance (ciss) @ Vds
176pF @ 25V
Power - Max
500mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.62 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000265405
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BSR315P L6327 Summary of contents
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