BSR315P Infineon Technologies, BSR315P Datasheet
BSR315P
Specifications of BSR315P
Available stocks
Related parts for BSR315P
BSR315P Summary of contents
Page 1
... =25 °C D,pulse A = =0. =25 °C tot stg JESD22-C101 page 1 BSR315P -60 0.8 -0.62 SC-59 Marking Lead free Packing LB Yes Non dry Value steady state -0.62 -0.49 -2.48 24 ±20 0.5 -55 ... 150 1A (250V to 500V) 260 °C 55/150/56 2012-03- Unit ...
Page 2
... GSS =-4 DS(on) I =-0. =- =-0. |>2 DS(on)max =-0. page 2 Values min. typ. max 250 - -1 -0 -10 -100 = -10 -100 - 870 1300 - 620 800 , 0.5 0.9 - BSR315P Unit K/W V µ 2012-03-15 ...
Page 3
... plateau =25 ° S,pulse =-0. =25 ° =- =| /dt =100 A/µ page 3 BSR315P Values Unit min. typ. max. - 132 176 0.4 0 ...
Page 4
... Max. transient thermal impedance Z =f(t thJA parameter µs 100 µ 100 100 10 [V] page 4 |≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p BSR315P 160 2012-03-15 ...
Page 5
... V 1000 900 -3.5 V 800 700 -3 V 600 -2.5 V 500 [V] 8 Typ. forward transconductance g =f 1 [V] page =25 ° -3 - [A] D =25 ° 0.5 1 1.5 -I [A] D BSR315P -4 2.5 2012-03-15 ...
Page 6
... Forward characteristics of reverse diode I =f parameter Ciss 10 -1 Coss Crss - [V] page =-160 µ max. typ. min. -60 - 100 T [° °C, typ 150 °C, typ 0 150 °C, 98% 25 °C, 98 [V] SD BSR315P 140 1.5 2012-03-15 ...
Page 7
... Typ. gate charge V =f(Q GS parameter °C 8 100 °C 125 ° 100 1000 16 Gate charge waveforms V V gs(th) Q g(th) 60 100 140 page =-0.62 A pulsed gate [nC] gate BSR315P gate 2012-03-15 ...
Page 8
... Package Outline SC-59: Outline Footprint Packaging Tape Dimensions in mm Rev 1.05 page 8 BSR315P 2012-03-15 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 1.05 page 9 BSR315P 2012-03-15 ...