NTD4810N-35G ON Semiconductor, NTD4810N-35G Datasheet - Page 3

• Manufacturer Part Number: NTD4810N-35G
• Description: MOSFET N-CH 30V 8.6A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4810N-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1350pF @ 12V
• Power - Max: 1.28W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DRAIN- -SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
ELECTRICAL CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
Parameter
(T
J
= 25°C unless otherwise noted)
Symbol
Q
V
t
R
L
L
L
L
RR
ta
tb
SD
RR
G
S
D
D
G
http://onsemi.com
V
V
GS
I
S
GS
= 30 A
= 0 V, dIs/dt = 100 A/ms,
3
= 0 V,
Test Condition
T
I
S
A
= 30 A
= 25°C
T
T
J
J
= 125°C
= 25°C
Min
0.0164
0.92
0.79
18.2
10.6
2.49
1.88
3.46
Typ
7.6
8.8
2.4
Max
1.2
Unit
nC
nH
ns
Ω
V