NTD4810N-35G ON Semiconductor, NTD4810N-35G Datasheet - Page 5

• Manufacturer Part Number: NTD4810N-35G
• Description: MOSFET N-CH 30V 8.6A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4810N-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1350pF @ 12V
• Power - Max: 1.28W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
GATE--TO--SOURCE OR DRAIN--TO--SOURCE VOLTAGE (VOLTS)
100
100
2000
1500
1000
10
10
0.1
500
1
1
0
1
0.1
10
V
I
V
D
C
C
Figure 11. Maximum Rated Forward Biased
DD
GS
rss
= 30 A
iss
V
V
SINGLE PULSE
T
DS
= 15 V
V
= 11.5 V
t
t
C
d(on)
GS
d(off)
Figure 9. Resistive Switching Time
DS
5
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
= 25°C
t
t
r
f
= 20 V
V
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
= 0 V
R
GS
G
R
THERMAL LIMIT
PACKAGE LIMIT
, GATE RESISTANCE (OHMS)
DS(on)
Safe Operating Area
0
1
V
GS
V
C
DS
LIMIT
rss
= 0 V
5
10
10
10
TYPICAL PERFORMANCE CURVES
15
T
J
10 ms
1 ms
10 ms
100 ms
dc
20
= 25°C
http://onsemi.com
C
C
oss
iss
100
100
25
5
100
110
12
10
11
30
25
20
15
10
90
80
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0.5
0
5
0
0
25
0
Figure 8. Gate- -To- -Source and Drain- -To- -Source
Figure 10. Diode Forward Voltage vs. Current
1 2 3 4
V
Figure 12. Maximum Avalanche Energy vs.
T
Q
GS
J
1
V
= 25°C
SD
= 0 V
50
, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
Starting Junction Temperature
0.6
T
J
Q
5
, JUNCTION TEMPERATURE (°C)
Q
G
Voltage vs. Total Charge
2
6 7 8 9
, TOTAL GATE CHARGE (nC)
75
0.7
10
100
Q
111213 141516 171819 202122
T
0.8
125
I
0 V < V
T
D
J
= 30 A
= 25°C
GS
0.9
I
D
150
< 11.5 V
= 14 A
175
1.0