NTGS3433T1G ON Semiconductor, NTGS3433T1G Datasheet
NTGS3433T1G
Manufacturer Part Number
NTGS3433T1G
Description
MOSFET P-CH 12V 2.35A 6-TSOP
Manufacturer
ON Semiconductor
Datasheet
1.NTGS3433T1G.pdf
(5 pages)
Specifications of NTGS3433T1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 3.3A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
2.35A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Input Capacitance (ciss) @ Vds
550pF @ 5V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SC-74-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.075 Ohms
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 3.3 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTGS3433T1GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTGS3433T1G
Manufacturer:
ON
Quantity:
3 000
Company:
Part Number:
NTGS3433T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTGS3433T1G
Manufacturer:
ON/安森美
Quantity:
20 000
NTGS3433T1
MOSFET
−3.3 Amps, −12 Volts
P−Channel TSOP−6
Features
•
•
•
•
Applications
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu 0.06″ thick single
2. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu 0.06″ thick single
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance
Total Power Dissipation @ T
Drain Current
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Thermal Resistance
Total Power Dissipation @ T
Drain Current
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
Ultra Low R
Higher Efficiency Extending Battery Life
Miniature TSOP−6 Surface Mount Package
Pb−Free Package is Available
Power Management in Portable and Battery−Powered Products,
sided), t t 5.0 seconds.
sided), operating to steady state.
Junction−to−Ambient (Note 1)
− Continuous @ T
− Pulsed Drain Current (T
Junction−to−Ambient (Note 2)
− Continuous @ T
− Pulsed Drain Current (T
Purposes for 10 Seconds
DS(on)
Rating
A
A
= 25°C
= 25°C
(T
J
= 25°C unless otherwise noted.)
A
A
p
p
= 25°C
= 25°C
t 10 mS)
t 10 mS)
Symbol
T
V
R
R
J
V
I
I
P
P
P
P
, T
T
DSS
DM
DM
I
I
I
I
qJA
qJA
GS
D
D
D
D
d
d
d
d
L
stg
−55 to
Value
"8.0
−2.35
−2.35
−1.65
62.5
−3.3
−12
−20
128
−14
150
260
2.0
1.0
1.0
0.5
1
Amps
Amps
Amps
Amps
Amps
Amps
Watts
Watts
Watts
Watts
°C/W
°C/W
Volts
Volts
Unit
°C
°C
NTGS3433T1
NTGS3433T1G
†For information on tape and reel specifications,
V
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(BR)DSS
−12 V
*Date Code orientation may vary depending
upon manufacturing location.
CASE 318G
Device
(Note: Microdot may be in either location)
STYLE 1
TSOP−6
GATE
433
M
G
ORDERING INFORMATION
1
3
75 mW @ −4.5 V
http://onsemi.com
R
= Specific Device Code
= Date Code*
= Pb−Free Package
DRAIN
DS(on)
(Pb−Free)
Package
TSOP−6
TSOP−6
SOURCE
P−Channel
4
MARKING DIAGRAM &
TYP
Publication Order Number:
1 2 5 6
PIN ASSIGNMENT
Drain
Drain
6
1
433 M G
3000 Tape & Reel
3000 Tape & Reel
Drain
Drain
G
NTGS3433T1/D
5
2
Shipping
I
Source
4
3
Gate
−3.3 A
D
Max
†
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NTGS3433T1G Summary of contents
Page 1
... J stg *Date Code orientation may vary depending 150 upon manufacturing location. T 260 °C L NTGS3433T1 NTGS3433T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R TYP I Max ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc −10 mA Zero Gate Voltage Drain Current ( Vdc −8 Vdc 25° ...
Page 3
V = − −3 − −4 25° 0.25 0.5 0.75 1 −V DRAIN−TO−SOURCE ...
Page 4
TOTAL GATE CHARGE (nC) g, Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 ...
Page 5
... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...