NTGS3433T1G ON Semiconductor, NTGS3433T1G Datasheet - Page 4

• Manufacturer Part Number: NTGS3433T1G
• Description: MOSFET P-CH 12V 2.35A 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGS3433T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 2.35A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 550pF @ 5V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.075 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 3.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTGS3433T1GOS

6
5
4
3
2
1
0
0.1
0.1
0
1
1E−04
Q
Drain−to−Source Voltage vs. Total Charge
gs
Duty Cycle = 0.5
0.01
0.05
0.02
0.2
0.1
Figure 7. Gate−to−Source and
2
Q
Q
g,
gd
Figure 9. Normalized Thermal Transient Impedance, Junction−to−Ambient
TOTAL GATE CHARGE (nC)
1E−03
QT
4
16
12
20
8
4
0
0.01
Single Pulse
6
1E−02
T
I
Figure 10. Single Pulse Power
SQUARE WAVE PULSE DURATION (sec)
D
J
0.10
= −3.3 A
= 25°C
8
http://onsemi.com
1E−01
TIME (sec)
10
1.00
4
10
9
8
7
6
5
4
3
2
1
0
0
1E+00
10.00
Figure 8. Diode Forward Voltage vs. Current
−V
SD,
0.2
V
GS
SOURCE−TO−DRAIN VOLTAGE (VOLTS)
= 0 V
100.00
0.4
1E+01
T
0.6
J
= 150°C
0.8
1E+02
T
J
= 25°C
1
1E+03
1.2