NTGS3433T1G ON Semiconductor, NTGS3433T1G Datasheet - Page 2

• Manufacturer Part Number: NTGS3433T1G
• Description: MOSFET P-CH 12V 2.35A 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGS3433T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 2.35A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 550pF @ 5V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.075 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 3.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTGS3433T1GOS

3. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%.
4. Class 1 ESD rated − Handling precautions to protect against electrostatic discharge are mandatory.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
BODY−DRAIN DIODE RATINGS
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate−Body Leakage Current
Gate Threshold Voltage
Static Drain−Source On−State Resistance
Forward Transconductance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Reverse Recovery Time
Diode Forward On−Voltage
Diode Forward On−Voltage
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
GS
GS
GS
GS
DS
GS
GS
DS
= 0 Vdc, I
= 0 Vdc, V
= 0 Vdc, V
= −8.0 Vdc, V
= +8.0 Vdc, V
= V
= −4.5 Vdc, I
= −2.5 Vdc, I
= −10 Vdc, I
GS
, I
D
D
= −250 mAdc)
DS
DS
= −10 mA)
D
D
D
DS
DS
= −8 Vdc, T
= −8 Vdc, T
= −3.3 Adc)
= −3.3 Adc)
= −2.9 Adc)
= 0 Vdc)
= 0 Vdc)
Characteristic
J
J
= 25°C)
= 70°C)
(V
(I
(V
(V
S
DS
(I
(I
V
DD
= −1.7 Adc, dl
(T
DS
S
S
GS
= −10 Vdc, V
A
= −1.7 Adc, V
= −3.3 Adc, V
= −10 Vdc, I
= −5.0 Vdc, V
= −4.5 Vdc, R
= 25°C unless otherwise noted) (Notes 3 & 4)
I
D
f = 1.0 MHz)
= −3.3 Adc)
S
/dt = 100 A/ms)
GS
D
GS
GS
http://onsemi.com
GS
= −1.0 Adc,
g
= −4.5 Vdc,
= 0 Vdc)
= 0 Vdc)
= 6.0 W)
= 0 Vdc,
2
V
Symbol
R
V
(BR)DSS
t
t
I
I
I
C
DS(on)
C
V
V
GS(th)
Q
Q
C
g
Q
d(on)
d(off)
DSS
GSS
GSS
t
FS
oss
t
t
SD
SD
rss
iss
rr
tot
gs
gd
r
f
−0.50
Min
−12
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.70
0.055
0.075
−0.80
−0.90
Typ
550
450
200
110
100
7.0
7.0
2.0
3.5
20
20
30
−
−
−
−
−
−1.50
0.075
0.095
−100
Max
−1.0
−5.0
−1.5
100
120
115
15
30
30
−
−
−
−
−
−
−
−
−
mhos
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
pF
ns
ns
W