AO4421 Alpha & Omega Semiconductor Inc, AO4421 Datasheet
AO4421
Manufacturer Part Number
AO4421
Description
MOSFET P-CH -60V -6.2A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet
1.AO4421.pdf
(4 pages)
Specifications of AO4421
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 6.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
6.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
2900pF @ 30V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1025-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4421
Manufacturer:
AOS/万代
Quantity:
20 000
Rev 3: Nov 2010
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4421 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
and battery protection applications.
A
D
D
D
Top View
DS(ON)
A
D
B
T
T
T
T
. This device is ideal for load switch
S
A
A
A
A
=25° C
=70° C
=25° C
=70° C
S
C
SO8
S
A
A
A
G
=25° C unless otherwise noted
Bottom View
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
www.aosmd.com
D
DM
J
DS
GS
D
, T
STG
Product Summary
V
I
R
R
100% UIS Tested
100% R
D
DS
DS(ON)
DS(ON)
(at V
Symbol
R
R
(at V
(at V
GS
JA
JL
g
=-10V)
Tested
GS
GS
Maximum
-55 to 150
=-10V)
= -4.5V)
±20
-6.2
-60
-40
3.1
-5
2
Typ
60V P-Channel MOSFET
24
54
21
G
Max
40
75
30
D
S
-60V
-6.2A
< 40m
< 50m
AO4421
Units
Units
° C/W
° C/W
° C/W
° C
W
V
V
A
Page 1 of 4
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AO4421 Summary of contents
Page 1
... General Description The AO4421 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is ideal for load switch DS(ON) and battery protection applications. SO8 Top View Absolute Maximum Ratings T =25° C unless otherwise noted A Parameter Drain-Source Voltage ...
Page 2
Electrical Characteristics (T =25° C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...
Page 3
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 25 -10V -4V -4.5V 20 -5V - (Volts) DS Fig 1: On-Region Characteristics 45 V =-4. =-10V ...
Page 4
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 V =-30V DS I =-6. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150° =25° C J(Max DS(ON) ...