SPD09P06PL G Infineon Technologies, SPD09P06PL G Datasheet - Page 6

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SPD09P06PL G

Manufacturer Part Number
SPD09P06PL G
Description
MOSFET P-CH 60V 9.7A TO252-3
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of SPD09P06PL G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 6.8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
9.7A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Input Capacitance (ciss) @ Vds
450pF @ 25V
Power - Max
42W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.25 Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.7 A
Power Dissipation
42 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
89 ns
Minimum Operating Temperature
- 55 C
Rise Time
168 ns
Package
DPAK (TO-252)
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
250.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000443928
9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
pF
0.75
0.55
0.45
0.35
0.25
0.15
0.05
10
10
10
0.6
0.5
0.4
0.3
0.2
0.1
0
-60
3
2
1
0
SPD09P06PL
DS
Rev 2.5
= f (T
)
-20
-5
D
GS
j
)
= -6.8 A, V
=0V, f=1 MHz
20
-10
98%
60
typ
-15
GS
100
= -10 V
-20
C
C
C
iss
oss
rss
140 °C
V
T
V
j
DS
200
-30
Page 6
10 Gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
2.4
V
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
2
1
0
-60
2
1
0
0
= f (T j )
SD
SPD09P06PL
)
-0.4
-20
GS
-0.8
p
= V
= 80 µs
20
DS
-1.2
T
T
T
T
j
j
j
j
98 %
typ.
2 %
, I
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
60
D
-1.6
SPD09P06PL G
= -250 µA
100
-2
2008-07-29
-2.4
°C
V
V
T
SD
j
180
-3

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