SPD09P06PL G Infineon Technologies, SPD09P06PL G Datasheet - Page 7

• Manufacturer Part Number: SPD09P06PL G
• Description: MOSFET P-CH 60V 9.7A TO252-3
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD09P06PL G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 42 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 89 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 168 ns
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 250.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000443928

13 Typ. avalanche energy
E
par.: I
15 Drain-source breakdown voltage
V
AS
(BR)DSS
mJ
= f (T
-72
-68
-66
-64
-62
-60
-58
-56
-54
V
80
60
50
40
30
20
10
D
0
-60
Rev 2.5
25
SPD09P06PL
= -9.7 A , V
j
= f (T
)
45
-20
65
j
)
20
85
DD
60
= -25 V, R
105
100
125
145
140
GS
°C
°C
= 25
T
T
j
j
185
200
Page 7
14 Typ. gate charge
V
parameter: I
GS
-16
-12
-10
= f (Q
V
-8
-6
-4
-2
0
0
SPD09P06PL
Gate
4
D
= -9.7 A pulsed
)
0,2
8
V
DS max
12
SPD09P06PL G
16
0,8 V
DS max
20
2008-07-29
nC
Q
Gate
28