BSP170P L6327 Infineon Technologies, BSP170P L6327 Datasheet - Page 4

• Manufacturer Part Number: BSP170P L6327
• Description: MOSFET P-CH 60V 1.9A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP170P L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 410pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSP170P L6327; BSP170PL6327INTR; BSP170PL6327XT; SP000089225

Rev 2.52
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
1.8
1.5
1.2
0.9
0.6
0.3
10
10
0
DS
-1
-2
1
0
A
0.1
0
); T
)
limited by on-state
resistance
A
p
=25 °C
40
1)
; D =0
1
-V
T
A
DS
80
[°C]
[V]
100 ms
10
DC
10 ms
120
100 µs
1 ms
10 µs
160
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
=f(t
10
2.1
1.8
1.5
1.2
0.9
0.6
0.3
10
10
10
A
0
-1
2
1
0
); |V
10
p
0
)
-5
0.02
GS
0.2
0.05
0.5
0.1
0.01
10
|≥10 V
p
-4
/T
40
10
single pulse
-3
10
T
-2
t
A
p
80
[°C]
[s]
10
-1
10
120
0
BSP 170 P
10
1
2009-02-16
160
10
2