BSP170P L6327 Infineon Technologies, BSP170P L6327 Datasheet - Page 6

• Manufacturer Part Number: BSP170P L6327
• Description: MOSFET P-CH 60V 1.9A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP170P L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 410pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSP170P L6327; BSP170PL6327INTR; BSP170PL6327XT; SP000089225

Rev 2.52
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
600
550
500
450
400
350
300
250
200
150
100
10
10
10
50
DS
=f(T
0
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=-1.9 A; V
5
20
98 %
10
GS
-V
T
=-10 V
j
DS
Ciss
[°C]
Coss
Crss
60
typ.
[V]
15
100
20
140
page 6
25
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
10
=f(T
SD
5
4
3
2
1
0
-1
-2
1
0
-60
)
0
150 °C, 98%
j
); V
j
GS
0.5
-20
=V
25 °C, typ
DS
25 °C, 98%
; I
1
20
D
=-250 µA
-V
min.
T
j
SD
1.5
typ.
[°C]
60
[V]
max.
2
100
150 °C, typ
BSP 170 P
2.5
140
2009-02-16
3