BSZ120P03NS3E G Infineon Technologies, BSZ120P03NS3E G Datasheet
BSZ120P03NS3E G
Manufacturer Part Number
BSZ120P03NS3E G
Description
MOSFET P-CH 30V 40A TSDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSZ120P03NS3E_G.pdf
(9 pages)
Specifications of BSZ120P03NS3E G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
1.9V @ 73µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
3360pF @ 15V
Power - Max
2.1W
Mounting Type
Surface Mount
Package / Case
8-TSDSON
Package
S3O8 (3x3mm style SuperSO8)
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
12.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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